منابع مشابه
Electronic Structure Theory of Radiation-Induced Defects in Si/SiO2
Radiation-induced defects in metal-oxide semiconductor (MOS) materials are a major problem for MOS devices exposed to high-energy radiation such as in space-based applications. Charge trapping at these defect sites degrades the current/voltage performance of MOS devices and ultimately leads to device failure. A physical understanding of the structure and formation mechanisms of these defects is...
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15 صفحه اولFermi surface and electronic structure of Pb/Ge„111..
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ژورنال
عنوان ژورنال: Journal of Physics C: Solid State Physics
سال: 1985
ISSN: 0022-3719
DOI: 10.1088/0022-3719/18/25/014